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半導體物理電子學(第2版)(影印版) 圖書
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內容介紹



出版社:科學出版社
ISBN:9787030209405
商品編碼:10030927114168

品牌:文軒
出版時間:2008-02-01
代碼:198


    
    
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作  者:(美)李 編
/
定  價:198
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出 版 社:科學出版社
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出版日期:2008年02月01日
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頁  數:716
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裝  幀:精裝
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ISBN:9787030209405
/
目錄
●Preface
1.Classification of Solids and Crystal Structure
1.1 Introduction
1.2 The Bravais Lattice
1.3 The Crystal Structure
1.4 Miller Indices and Crystal Planes
1.5 The Reciprocal Lattice and Brillouin Zone
1.6 Types of Crystal Bindings
1.7 Defects in a Crystalline Solid
Problems
Bibliography
2.Lattice Dynamics
2.1 Introduction
2.2 The One-Dimensional Linear Chain
2.3 Dispersion Relation for a Three-Dimensional Lattice
2.4 The Concept of Phonons
2.5 The Density of States and Lattice Spectrum
2.6 Lattice Specific Heat
Problems
References
Bibliography
3.Semiconductor Statistics
3.1 Introduction
3.2 Maxwell-Boltzmann Statistics
3.3 Fermi-Dirac Statistics
3.4 Bose-Einstein Statistics
3.5 Statistics for the Shallow-Impurity States in a Semiconductor
Problems
Bibliography
4.Energy Band Theory
4.1 Introduction
4.2 Basic Quantum Concepts and Wave Mechanics
4.3 The Bloch-Floquet Theorem
4.4 The Kronig-Penney Model
4.5 The Nearly Free Electron Approximation
4.6 The Tight-Binding Approximation
4.7 Energy Band Structures for Some Semiconductors
4.8 The Effective Mass Concept for Electrons and Holes
4.9 Energy Band Structures and Density of States for Low-Dimensional Systems
Problems
References
Bibliography
5.Equilibrium Properties of Semiconductors
5.1 Introduction
5.2 Densities of Electrons and Holes in a Semiconductor
5.3 Intrinsic Semiconductors
5.4 Extrinsic Semiconductors
5.5 Ionization Energies of Shallow-and Deep-Level Impurities
5.6 Hall Effect,Electrical Conductivity,and Hall Mobility
5.7 Heavy Doping Effects in a Degenerate Semiconductor
Problems
References
Bibliography
6.Excess Carrier Phenomenon in Semiconductors
6.1 Introduction
6.2 Nonradiative Recombination: The Shockley-Read-Hall Model
6.3 Band-to-Band Radiative Recombination
6.4 Band-to-Band Auger Recombination
6.5 Basic Semiconductor Equations
6.6 The Charge-Neutrality Equation
6.7 The Haynes-Shockley Experiment
6.8 The Photoconductivity Decay Experiment
6.9 Surface States and Surface Recombination Velocity
6.10 Deep-Level Transient Spectroscopy Technique
6.11 Surface Photovoltage Technique
Problems
References
Bibliography
7. Transport Properties of Semiconductors
7.1 Introduction
7.2 Galvanomagnetic, Thermoelectric, and Thermomagnetic Effects
7.3 Boltzmann Transport Equation
7.4 Derivation of Transport Coefficients for n-type Semiconductors
7.5 Transport Coefficients for the Mixed Conduction Case
7.6 Transport Coefficients for Some Semiconductors
Problems
References
Bibliography
8. Scattering Mechanisms and Carrier Mobilities in Semiconductors.
8.1 Introduction
8.2 Differential Scattering Cross-Section
8.3 Ionized Impurity Scattering
8.4 Neutral Impurity Scattering
8.5 Acoustical Phonon Scattering
8.6 Optical Phonon Scattering
8.7 Scattering by Dislocations
8.8 Electron and Hole Mobilities in Semiconductors
8.9 Hot-Electron Effects in a Semiconductor
Problems
References
Bibliography
9. Optical Properties and Photoelectric Effects
9.1 Introduction
9.2 Optical Constants of a Solid
9.3 Free-Carrier Absorption Process
9.4 Fundamental Absorption Process
9.5 The Photoconductivity Effect
9.6 The Photovoltaic (Dember) Effect
9.7 The Photomagnetoelectric Effect
Problems
References
Bibliography
10. Metal-Semiconductor Contacts
10.1 Introduction
10.2 Metal Work Function and Schottky Effect
10.3 Thermionic Emission Theory
10.4 Ideal Schottky Contact
10.5 Current Flow in a Schottky Diode
10.6 Current-Voltage Characteristics of a Silicon and a GaAs
Schottky Diode
10.7 Determination of Schottky Barrier Height
10.8 Enhancement of Effective Barrier Height
10.9 Applications of Schottky Diodes
10.10 Ohmic Contacts in Semiconductors
Problems
References
Bibliography
11. p-n Junction Diodes
11.1 Introduction
11.2 Equilibrium Properties of a p-n Junction Diode
11.3 p-n Junction Diode Under Bias Conditions
11.4 Minority Carrier Distribution and Current Flow
11.5 Diffusion Capacitance and Conductance
11.6 Minority Carrier Storage and Transient Behavior
11.7 Zener and Avalanche Breakdowns..;
11.8 Tunnel Diodes
11.9 p-n Heterojunction Diodes
11.10 Junction Field-Effect Transistors
Problems
References
Bibliography
12. Solar Cells and Photodetectors
12.1 Introduction
12.2 Photovoltaic Devices (Solar Cells)
12.3 Photodetectors
Problems
References
Bibliography
13. Light-Emitting Devices
13.1 Introduction
13.2 Device Physics, Structures, and Characteristics of LEDs
13.3 LED Materials and Technologies
13.4 Principles of Semiconductor LDs
13.5 Laser Diode (LD) Materials and Technologies
Problems
References
Bibliography
14. Bipolar Junction Transistors
14.1 Introduction
14.2 Basic Device Structures and Modes of Operation
14.3 Current-Voltage Characteristics
14.4 Current Gain, Base Transport Factor, and Emitter Injection Efficiency
14.5 Modeling of a Bipolar Junction Transistor
14.6 Switching and Frequency Response
14.7 Advanced Bipolar Junction Transistors
14.8 Thyristors
14.9 Heterojunction Bipolar Transistors
Problems
References
Bibliography
15. Metal-Oxide-Semiconductor Field-Effect Transistors
15.1 Introduction
15.2 An Ideal Metal-Oxide-Semiconductor System
15.3 Oxide Charges and Interface Traps
15.4 MOS Field-Effect Transistors
15.5 SOI MOSFETS
15.6 Charge-Coupled Devices
Problems
References
Bibliography
16. High-Speed III-V Semiconductor Devices
16.1 Introduction
16.2 Metal-Semiconductor Field-Effect Transistors
16.3 High Electron Mobility Transistors
16.4 Hot-Electron Transistors
16.5 Resonant Tunneling Devices
16.6 Transferred-Electron Devices
Problems
References
Bibliography
Solutions to Selected Problems
Appendix
Index
內容簡介
本書介紹了碳納米管科學的基礎內容,以及近期新技術發展及應用前景。每章開篇首先是教學指導,介紹此相關課題在物理學、化學和材料學等學科間的聯繫。在這些重要知識背景的總結之後,針對具體問題進行詳細介紹。介紹的主要內容包括碳的多態性和微觀相、合成方法和生長機制、電子顯微結構分析、光譜法電子結構、運輸、機械、納米復合材料的表面特性等。



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