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出版社：科學出版社 ISBN：9787030355775 商品編碼：10027180200910 包裝：精裝 開本：小16開 出版時間：2013-01-01 頁數：569 字數：788000 代碼：198
"| 商品基本信息，請以下列介紹為準 | | 商品名稱： | 實用光伏手冊-原理與應用(上)-(原著第2版)-導讀版 | | 作者： | Augustin McEvoy，Tom Markvart，Luis Castaner編著 | | 代碼： | 198.0 | | 出版社： | 科學出版社 | | 出版日期： | 2013-01-01 | | ISBN： | 9787030355775 | | 印次： | | | 版次： | 1 | | 裝幀： | 精裝 | | 開本： | 小16開 |
| 目錄 | 第2版序言
第1版序言
編者
引論
Part ⅠA:太陽電池
ⅠA-1.太陽電池工作原理 T.Markvart and L.Casta*er
1.引言
2.電學特征
3.光學特性
4.經典太陽電池結構
ⅠA-2.半導體材料和模型化 T.Markvart and L.Casta*er
1.引言
2.半導體能帶結構
3.半導體中的載流子統計
4.輸運方程
5.載流子遷移率
6.光吸收作用下的載流子增殖
7.復合
8.輻射損傷
9.重摻雜效應
10.氫化非晶硅的性能
感謝
ⅠA-3.理想效率 P.T.Landerg and T.Markvart
1.引言
2.熱力學效率
3.與能量相關的效率
4.使用肖特基太陽電池方程的效率
5.對效率的一般解釋
Part ⅠB:晶硅太陽電池
ⅠB-1.晶硅:制造和性能 F.Ferrazza
1.引言
2.用於光伏制造的硅晶片的特征
3.原料硅
4.晶備方法
5.成形和硅片切割
ⅠB-2.率硅太陽電池概念 M.A.Green
1.引言
2.率實驗室電池
3.絲網印刷電池
4.激光處理電池
5.HIT電池
6.背接觸電池
7.總結
致謝
ⅠB-3.晶硅太陽電池的低成本工業化技術 J.Scik,S.Sivoththaman,J.Nijs,R.P.Mertens and R.Van Overstraeten
1.引言
2.電池制程
3.工業太陽電池技術
4.商業光伏組件的成本
ⅠB-4.薄型硅太陽電池 M.Mauk,P.Sims,J.Rand and A.Barnett
1.引言、背景和評價
2.薄型硅太陽電池的光捕獲
3.薄型硅太陽電池的電壓增強
4.薄型太陽電池的硅沉積和晶體生長
5.基於基板減薄的薄型硅太陽電池
6.器件結果總結
Part ⅠC:薄膜技術
ⅠC-1.薄膜硅太陽電池 A.Shah
1.引言
2.氫化非晶硅(a-Si:H)層
3.氫化微晶硅(μc-Si:H)層
4.p-i-n和n-i-p結構的薄膜太陽電能
5.串聯和多結太陽電池
6.組件產品和性能
7.總結
ⅠC-2.CdTe薄膜光伏組件 D.Bonnet
1.引言
2.制備CdTe薄膜太陽電池的步驟
3.集成組件的制備
4.CdTe薄膜組件的生產
5.產品及其應用
6.未來展望
ⅠC-3.Cu(In,Ga)Se2薄膜太陽電池 U.Ran and H.W.Schock
1.引言
2.材料性能
3.電池和組件技術
4.器件物理
5.寬帶隙黃銅礦
6.結論
致謝
ⅠC-4.為光伏應用的黃銅礦化合物半導體研展和研究成果轉化為實際的太陽電池產品 A.J?ger-Waldau
1.引言
2.研究方向
3.工業化
4.結論和展望
Part ⅠD:空間太陽電池和聚光電池
ⅠD-1.GaAs和率空間太陽電池 V.M.Andreev
1.Ⅲ-Ⅴ族太陽電池的歷史回顧
2.單結Ⅲ-Ⅴ族空間太陽電池
3.多結空間太陽電池
致謝
ⅠD-2.率Ⅲ-Ⅴ族多結太陽電池 S.P.Philipps,F.Dimroth and A.W.Bett
1.引言
2.Ⅲ-Ⅴ族多結太陽電池的特殊方面
3.Ⅲ-Ⅴ族太陽電池概念
4.結論
致謝
ⅠD-3.單個太陽光率背接觸硅太陽電池和聚光應用 P.J.Verlinden
1.引言
2.IBC太陽電池的聚光應用
3.背接觸硅太陽電池
4.背接觸太陽電池模型化
5.周邊和邊緣復合
6.背接觸太陽電池的制備工藝
7.背接觸太陽電池的穩定性
8.效率目標為30%的硅太陽電池
9.如何改善背接觸太陽電池的效率
10.結論
致謝
Part ⅠE.染料敏化和有機太陽電池
ⅠE-1.染料敏化光電化學電池 A.Hagfeldt,U.B.Cappel,G.Boschloo,L.Sun,L.Kloo,H.Pettersson and E.A.Gibson
1.引言
2.光電化學電池
3.染料敏化太陽電池
4.未來展望
ⅠE-2.有機太陽電池 C.Dyer-Smith and J.Nelson
1.引言
2.有機電子材料
3.器件工作原理
4.太陽電池性能的優化
5.生產問題
6.結論
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| 摘要 | CHAPTER IA-1
Principles of Solar Cell Operation
Tom Markvarta and Luis Casta?erb
aSchool of Engineering Sciences, University of Southampton, UK
bUniversidad Politecnica de Catalunya, Barcelona, Spain
1. Introduction 7
2. Electrical Characteristics 10
2.1 The Ideal Solar Cell 10
2.2 Solar Cell Characteristics in Practice 13
2.3 The Quantum Efficiency and Spectral Response 15
3. Optical Properties 16
3.1 The Antireflection Coating 16
3.2 Light Trapping 17
4. Typical Solar Cell Structures 19
4.1 The pn Junction Solar Cell 19
4.1.1 The pn Junction 19
4.1.2 Uniform Emitter and Base 23
4.1.3 Diffused Emitter 23
4.2 Heterojunction Cells 25
4.3 The pin Structure 27
4.4 Series Resistance 29
References 30
1. INTRODUCTION
Photovoltaic energy conversion in solar cells consists of two essential
steps. First, absorption of light generates an electronhole pair. The electron
and hole are then separated by the structure of the device―electronr>to the negative terminal and holes to the positive terminal―thus generating
electrical power.
This process is illustrated in Figure 1, which shows the principal features of
the typical solar cells in use today. Each cell is depicted in two ways. One
diagram shows the physical structure of the device and the dominant electrontransport
processes that contribute to the energy-conversion procesr>Figure 1 (a) The structure of crystalline silicon solar cell, the typical solar cell in ur>today. The bulk of the cell is formed by a thick p-type base in which most of the incident
light ied and most power is generated. After light absorption, the
minority carriers (electrons) diffuse to the junction where they are swept acroy
the strong built-in electric field. The electrical power is collected by metal contactr>to the front and back of the cell (Chapter-2 and Ib-3). (b) The typical
galliumarsenide solar cell has what is sometimes called a heteroface structure, by
virtue of the thin passivating GaAlAs layer that covers the top surface. The GaAlAr>‘window’ layer prevents minority carriers from the emitter (electrons) to reach the surface
and recombine but transmits most of the incident light into the emitter layer where
most of the power is generated. The operation of this pn junction solar cell is similar in
many respects to the operation of the crystalline silicon solar cell in (a), but the stantial
difference in thickness should be noted. (Chapters Id-1 and Id-2). (c) The structure
of a typical single-junction amorphous silicon solar cells. Based on pin junction, thir>Figure 1 (Continued) cell contains a layer of intrinsic semiconductor that separater>two heavily doped p and n regions near the contacts. Generation of electrons and
holes occurs principally within the space-charge region, with the advantage that
charge separation can be assisted by the built-in electric field, thus enhancing the collection
efficiency. The contacts are usually formed by a transparent conducting oxide
(TCO) at the top of the cell and a metal contact at the back. Light-trapping features in
TCO can help reduce the thickness and reduce degradation. The thickness of a-Si solar
cells ranges typically from a fraction of a micrometer to several micrometerr>(Chapter Ic-1). (d), (e) The typical structures of solar cellased on compound semiconductorr>copper indiumgallium diselenide (d) and cadmium telluride (e). The
front part of the junction is formed by a wide-band-gap material (CdS ‘window’) that
The same processes are shown on the band diagram of the semiconductor, or
energy levels in the molecular devicer>The diagrams in Figure 1 are schematic in nature, and a word of
warning is in place regarding the differences in scale: whilst the thickner>of crystalline silicon cells (shown in Figures 1(a) and 1(f)) is of the order
of 100 micrometres or more, the thickness of the various devices in
Figures 1(b)1(e) (thin-film and GaAased cells) might be several
micrometres or less. The top surface of the semiconductor structurer>shown in Figure 1 would normally be covered with antireflection coating.
The figure caption can ale used to locate the specific chapter in thir>book where full details for each type of device can be found.
2. ELECTRICAL CHARACTERISTICS
2.1 The Ideal Solar Cell
An ideal solar cell can be represented by a current source connected in parallel
with a rectifying diode, as shown in the equivalent circuit of Figure 2.
The corresponding IV characteristic is described by the Shockley solar
cell equation
I 5Iph 2Io e
qV
kBT 21 e1T
Figure 1 (Continued) transmits most of the incident light to the aber layer (Cu(In,
Ga)Se2 or CdTe) where virtually all electronhole pairs are produced. The top contact ir>formed by a transparent conducting oxide. These solar cells are typically a few micrometerr>thick (Chapters Ic-2 and Ic-3). (f) Contacts can be arranged on the same side of
the solar cell, as in this point contact solar cell. The electronhole pairs are generated in
the bulk of this crystalline silicon cell, which is near intrinsic, usually slightly n-type.
Because this cell is slightly thinner than the usual crystalline silicon solar cell, efficient
light absorption is aided here by light trapping: a textured top surface and a reflecting
back surface (Chapter Ib-3). (g), (h) The most recent types of solar cell are based on
molecular materials. In these cells, light ied by a dye molecule, transferring an
electron from the ground state to an excited state rather than from the valence band to
the conduction band as in the semiconductor cells. The electron is sequently
removed to an electron acceptor and the electron deficiency (hole) in the ground state
is replenished from an electron donor. A number of choices exist for the electron acceptor
and donor. In the dye-sensitised cell (g, Chapter Ie-1), the electron donor is a redox
electrolyte and the role of electron acceptor is the conduction band of titanium dioxide.
In plastic solar cells (h, Chapter Ie-2), both electron donor and electron acceptor are
molecular materialr>Figure 2 The equivalent circuit of an ideal solar cell (full lines). Nonideal componentr>are shown by the dotted line.
where kB is the Boltzmann constant, T is the absolute temperature, q
(.0) is the electron charge, and V is the voltage at the terminals of the
cell. Io is well known to electronic device engineers as the diode saturation
current (see, for example, [1]), serving as a reminder that a solar cell
in the dark is simply a semiconductor current rectifier, or diode. The
photogenerated current Iph is closely related to the photon flux incident
on the cell, and its dependence on the wavelength of light is frequently
discussed in terms of the quantum efficiency or spectral response (see
Section 2.3). The photogenerated current is usually independent of the
applied voltage with pole exceptions in the case of a-Si and some
other thin-film materials [24].
Figure 3(a) shows the IV characteristic (Equation (1)). In the ideal
case, the short-circuit current Isc is equal to the photogenerated current
Iph, and the open-circuit voltage Voc is given by
Voc 5
kBT
q
ln 11
Iph
I0 e2T
The maximum theoretically achievable values of the short-circuit current
density Jph and of the open-circuit voltage for different materials are
discussed and compared with the best measured values in Chapter Ia-3.
The power P 5 IV produced by the cell is shown in Figure 3(b). The
cell generates the maximum power Pmax at a voltage Vm and current Im,
and it is convenient to define the fill factor FF by
FF 5
ImVm
IscVoc
5
Pmax
IscVoc e3T
The fill factor FF of a solar cell with the ideal characteristic (1) will be
furnished by the script 0. It cannot be determined analytically, but it
Figure 3 The IV characteristic of an ideal solar cell (a) and the power produced by
the cell (b). The power generated at the maximum power point is equal to the
shaded rectangle in (a).
can be shown that FF0 depends only on the ratio voc5Voc/kBT. FF0 ir>determined, to an excellent accuracy, by the approximate expression [5]
FF0 5
voc 2lnevoc 10:72T
voc 11
The IV characteristics of an ideal solar cell complies with the superposition
principle: the functional dependence (1) can be obtained from the
corresponding characteristic of a diode in the dark by shifting the diode
characteristic along the current axiy Iph (Figure 4).
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