三維射頻集成應用是硅通孔（TSV）三維集成技術重要應用發展方向。隨著5G與毫米波應用的興起，基於高阻硅TSV晶圓級封裝的FBAR器件、RF MEMS開關器件、基於TGV的濾波器等逐漸實現商業化應用，TSV三維異質射頻集成逐漸成為優選電子信息裝備領域工程化應用的關鍵技術。1. 本書全面闡述面向三維射頻異質集成應用的高阻硅TSV轉接板技術，包括設計、工藝、電學特性評估與優化等研究，從TSV、CPW等結構入手，到件以及集成樣機，探討金屬化對高頻特性的影響規律；2. 展示基於高阻等

●Preface by Yufeng JinixPreface by Shenglin MaxiAcknowledgmentsxvAbout the authorsxvii1 Introduction to HR-Si interposer technology11.1 Background11.2 3D RF heterogeneous integration scheme 21.3 HR-Si interposer technology71.4 TGV interposer technology161.5 Summary231.6 Main work of this book24References252 Design, process, and electrical verification of HR-Si interposer for 3D heterogeneous RF integration272.1 Introduction272.2 Design and fabrication process of HR-Si TSV interposer312.3 Design and analysis of RF transmission structure built on HR-Si TSV interposer382.4 Research on HR-Si TSV interposer fabrication process432.4.1 Double-sided deep reactive ion etching (DRIE) to open HR-Si TSV432.4.2 Thermal oxidation to form firm insulation layer442.4.3 Patterned Cu electroplating to achieve metallization and establish RDL layer452.4.4 Electroless nickel electroless palladium immersion gold (ENEPIG)542.4.5 Surface passivation542.5 Electrical characteristics analysis of transmission structure on HR-Si TSV interposer552.6 Conclusion61References633 Design, verification, and optimization of novel 3D RF TSV based on HR-Si interposer653.1 Introduction653.2 HR-Si TSV-based coaxial-like transmission structure693.3 Redundant RF TSV transmission structure703.4 Sample processing and test result analysis723.5 Optimization of HR-Si TSV interposer833.6 Conclusion90References934 HR-Si TSV integrated inductor954.1 Introduction954.2 HR-Si TSV interposer integrated planar inductor964.3 Research on 3D inductor based on HR-Si interposer1134.4 Summary123References1235 Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer1255.1 Introduction1255.2 Four-channel 2.5D heterogeneous integrated L-band receiver1265.3 3D heterogeneous integrated channelized frequency conversion receiver based on HR-Si interposer1325.3.1 HR-Si interposer integrated microstrip interdigital filter1345.3.2 Design, fabrication, and test of HR-Si interposer1425.3.3 3D heterogeneous integrated assembly and test1455.4 Conclusions 150References1516 HR-Si interposer embedded microchannel1536.1 Introduction1536.2 Design of a HR-Si interposer embedded microchannel1586.3 Thermal characteristics analy sis of a TSV interposer embedded microchannel1616.3.1 Simplified calculation based on a variable diffusion angle1626.3.2 Direct calculation based on analytical formula1636.3.3 A fitting formula based on simulation results1646.3.4 Equivalent thermal resistance network based on the high thermal conductivity path1646.4 Process development of a TSV interposer embedded microchannel1726.5 Characterization of cooling capacity of HR-Si interposer with an embedded microchannel1766.6 Evaluation of HR-Si interposer embedded with a cooling microchannel1786.7 Application verification of HR-Si interposer embedded with microchannel1886.8 Conclusions191References1927 Patch antenna in stacked HR-Si interposers 1977.1 Introduction1977.2 Theoretical basis of patch antenna2007.3 Design of a patch antenna in stacked HR-Si interposers2007.4 Processing of a patch antenna in stacked HR-Si interposers2137.5 Test and analysis of patch antenna in stacked HR-Si TSV interposer2137.6 Summary222References2228 Through glass via technology2258.1 Introduction2258.2 TGV fabrication2258.3 Metallization of TGV2288.4 Passive devices based on TGV technology2308.4.1 Technology description2308.4.2 MIM capacitor2308.4.3 TGV-based bandpass filter2318.5 Embedded glass fan-out wafer-level package technology2358.5.1 Technology description2358.5.2 AIP enabled by eGFO package technology2368.5.3 3D RF integration enabled by eGFO package technology2428.6 2.5D heterogeneous integrated L-band receiver based on TGV interposer2428.7 Conclusions249References2509 Conclusion and outlook251Appendix 1 Abbreviations 255Appendix 2 Nomenclature259Appendix 3 Conversion factors267Index269

三維射頻集成應用是硅通孔（TSV）三維集成技術的重要應用發展方向。隨著5G與毫米波應用的興起，基於高阻硅TSV晶圓級封裝的薄膜體聲波諧振器（FBAR） 器件、射頻微電子機械繫統（RF MEMS）開關器件等逐漸實現商業化應用，TSV三維異質射頻集成逐漸成為優選電子信息裝備領域工程化應用的關鍵技術。本書全面闡述面向三維射頻異質集成應用的高阻硅TSV轉接板技術，包括設計、工藝、電學特性評估與優化等研究，從TSV、共面波導傳輸線（CPW）等結構入手，到集件（IPD）以及集成樣機，探討金屬化對高頻特性的影響規律；展示基於高阻硅TSV的集成電感、微帶交指濾波器、天線等件；詳細介紹了2.5D集成四通道L波段接收組件、5～10GHz信道化變頻接收機、集成微流道散熱的2～6GHz GaN 功率放大器模塊等研究案例。本書也繫統綜述了高阻硅TSV三維射頻集成技術的國內外近期新研究進展等

馬盛林（Shenglin Ma）、金玉豐（Yufeng Jin） 著 著