了得網自然科學_晶體生長手冊（3）熔液法晶體生長技術

內容簡介

《Springer手冊精選繫列·晶體生長手冊（第3冊）：熔液法晶體生長技術（影印版）》關注了溶液生長法。在前兩章裡討論了水熱生長法的不同方面，隨後的三章介紹了非線性和激光晶體、KTP和KDP。通過在地球上和微重力環境下生長的比較給出了重力對溶液生長法的影響的知識。

作者簡介

Govindhan Dhanaraj is the Manager of Crystal GrowthTechnologies at Advanced Renewable Energy Company （ARC Energy） atNashua， New Hampshire （USA） focusing on the growth of large sizesapphire crystals for LED lighting applications， characterizationand related crystal growth furnace development. He received his PhDfrom the Indian Institute of Science， Bangalore and his Master ofScience from Anna University （India）. Immediately after hisdoctoral degree， Dr. Dhanaraj joined a National Laboratory，presently known as Rajaramanna Center for Advanced Technology inIndia， where he established an advanced Crystal Growth Laboratoryfor the growth of optical and laser crystals. Prior to joining ARCEnergy， Dr. Dhanaraj served as a Research Professor at theDepartment of Materials Science and Engineering， Stony BrookUniversity， NY， and also held a position of Research AssistantProfessor at Hampton University， VA. During his 25 years of focusedexpertise in crystal growth research， he has developed optical，laser and semiconductor bulk crystals and SiC epitaxial films usingsolution， flux， Czochralski， Bridgeman， gel and vapor methods， andcharacterized them using x-ray topography， synchrotron topography，chemical etching and optical and atomic force microscopictechniques. He co-organized a symposium on Industrial CrystalGrowth under the 17th American Conference on Crystal Growth andEpitaxy in conjunction with the 14th US Biennial Workshop onOrganometallic Vapor Phase Epitaxy held at Lake Geneva， WIin 2009.Dr. Dhanaraj has delivered invited lectures and also served assession chairman in many crystal growth and materials sciencemeetings. He has published over 100 papers and his researcharticles have attracted over 250 rich citations.

Govindhan Dhanaraj is the Manager of Crystal Growth
Technologies at Advanced Renewable Energy Company （ARC Energy） at
Nashua， New Hampshire （USA） focusing on the growth of large size
sapphire crystals for LED lighting applications， characterization
and related crystal growth furnace development. He received his PhD
from the Indian Institute of Science， Bangalore and his Master of
Science from Anna University （India）. Immediately after his
doctoral degree， Dr. Dhanaraj joined a National Laboratory，
presently known as Rajaramanna Center for Advanced Technology in
India， where he established an advanced Crystal Growth Laboratory
for the growth of optical and laser crystals. Prior to joining ARC
Energy， Dr. Dhanaraj served as a Research Professor at the
Department of Materials Science and Engineering， Stony Brook
University， NY， and also held a position of Research Assistant
Professor at Hampton University， VA. During his 25 years of focused
expertise in crystal growth research， he has developed optical，
laser and semiconductor bulk crystals and SiC epitaxial films using
solution， flux， Czochralski， Bridgeman， gel and vapor methods， and
characterized them using x-ray topography， synchrotron topography，
chemical etching and optical and atomic force microscopic
techniques. He co-organized a symposium on Industrial Crystal
Growth under the 17th American Conference on Crystal Growth and
Epitaxy in conjunction with the 14th US Biennial Workshop on
Organometallic Vapor Phase Epitaxy held at Lake Geneva， WIin 2009.
Dr. Dhanaraj has delivered invited lectures and also served as
session chairman in many crystal growth and materials science
meetings. He has published over 100 papers and his research
articles have attracted over 250 rich citations.

縮略語
PartC 溶液法生長晶體
17 地球微重力下從溶液中生長體材料單晶
17.1 結晶：成核和生長動力學
17.2 低溫溶液的晶體生長
17.3 更低溫度溶液的晶體生長
17.4 硫酸三甘鈦晶體生長：個案研究
17.5 微重力下硫酸三甘鈦晶體的溶液生長
17.6 蛋白質晶體生長
17.7 結語
參考文獻

18 水熱法大尺寸晶體生長
18.1 水熱法晶體生長的歷史

縮略語

PartC 溶液法生長晶體

17 地球微重力下從溶液中生長體材料單晶

17.1 結晶：成核和生長動力學

17.2 低溫溶液的晶體生長

17.3 更低溫度溶液的晶體生長

17.4 硫酸三甘鈦晶體生長：個案研究

17.5 微重力下硫酸三甘鈦晶體的溶液生長

17.6 蛋白質晶體生長

17.7 結語

參考文獻

18 水熱法大尺寸晶體生長

18.1 水熱法晶體生長的歷史

18.2 水熱法晶體生長的熱力學基礎

18.3 水熱法晶體生長的設備

18.4 部分晶體的水熱法生長

18.5 精細晶體的水熱法生長

18.6 水熱法生長納米晶體

18.7 結語

18.A附錄

參考文獻

19 水熱法與氨熱法生長ZnO和GaN

19.1 水熱法與氨熱法生長大晶體綜述

19.2 低缺陷大晶體的生長要求

19.3 物理與數學模型

19.4 過程模擬

19.5 水熱法生長ZnO晶體

19.6 氨熱法生長GaN

19.7 結論

參考文獻

20 KTP型非線性光學晶體的化學計量比和疇結構

20.1 背景

20.2 化學計量比與鐵電相轉變

20.3 生長引起的鐵電疇

20.4 人造疇結構

20.5 非線性光學晶體

參考文獻

21 高溫溶液生長：用於激光和非線性光學的晶體

21.1 基礎

21.2 高溫溶液生長

21.3 用TSSG法生長激光體材料和NLO單晶

21.4 液相外延：激光和NLO材料的外延膜的生長

參考文獻

22 KDP及同類晶體的生長與表征

22.1 背景

22.2 結晶機制和動力學

22.3 單晶的生長技術

22.4 生長條件對晶體缺陷的影響

22.5 晶體質量檢測

參考文獻

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